Impact of Band Structure and Absorber Dynamics on Self-Q-Switching in GaN-Based Multisection Laser Diodes at High Reverse Bias

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概要

• 論文の詳細を見る
• 2013-08-25

著者

• Kohler Klaus

  Fraunhofe-institut Fur Angewandte Festkorperphysik

• SCHWARZ Ulrich

  Fraunhofer Institute for Applied Solid State Physics IAF

• Holc Katarzyna

  Fraunhofer Institute for Applied Solid State Physics IAF, Tullastrasse 72, D-79108 Freiburg, Germany

• Weig Thomas

  Fraunhofer Institute for Applied Solid State Physics IAF, D-79108 Freiburg, Germany

• WAGNER Joachim

  Fraunhofer Institute for Applied Solid State Physics IAF

関連論文

• Band-Gap Renormalization and Excitonic Effects in Tunneling in Asymmetric Double Quantum Wells
• Bloch Oscillations in Semiconductor Superlattices
• Continuous-Wave, Room-Temperature Operation of 2-μm Sb-Based Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser Monolithically Grown on GaAs Substrates
• Fabrication of High Breakdown Pseudomorphic Modulation Doped Field Effect Transistors Using Double Dry Etched Gate Recess Technology in Combination with E-Beam T-Gate Lithography
• Self-Pulsation at Zero Absorber Bias in GaN-Based Multisection Laser Diodes
• Unequal Pumping of Quantum Wells in GaN-Based Laser Diodes
• AlGaN-Based 355nm UV Light-Emitting Diodes with High Power Efficiency
• High Power Efficiency AlGaN-Based Ultraviolet Light-Emitting Diodes
• Direct Observation of Charge Carrier Diffusion and Localization in an InGaN Multi Quantum Well
• AlGaN Ultraviolet A and Ultraviolet C Photodetectors with Very High Specific Detectivity D^{*}
• Blue Superluminescent Light-Emitting Diodes with Output Power above 100 mW for Picoprojection
• Impact of Band Structure and Absorber Dynamics on Self-Q-Switching in GaN-Based Multisection Laser Diodes at High Reverse Bias
• Experimental Determination of the Dominant Type of Auger Recombination in InGaN Quantum Wells
• Direct Observation of Charge Carrier Diffusion and Localization in an InGaN Multi Quantum Well (Special Issue : Recent Advances in Nitride Semiconductors)
• Impact of Band Structure and Absorber Dynamics on Self-Q-Switching in GaN-Based Multisection Laser Diodes at High Reverse Bias

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