Experimental Determination of the Dominant Type of Auger Recombination in InGaN Quantum Wells
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概要
著者
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Gomez-Iglesias Alvaro
OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, 93055 Regensburg, Germany
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Galler Bastian
OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, 93055 Regensburg, Germany
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Lugauer Hans-Jürgen
OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, 93055 Regensburg, Germany
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Binder Michael
OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, 93055 Regensburg, Germany
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Hollweck Richard
OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, 93055 Regensburg, Germany
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Folwill Yannick
OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, 93055 Regensburg, Germany
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Nirschl Anna
OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, 93055 Regensburg, Germany
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Hahn Berthold
OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, 93055 Regensburg, Germany
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Sabathil Matthias
OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, 93055 Regensburg, Germany
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WAGNER Joachim
Fraunhofer Institute for Applied Solid State Physics IAF
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