Experimental Determination of the Dominant Type of Auger Recombination in InGaN Quantum Wells

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概要

• 論文の詳細を見る

• We investigate theoretically the influence of type and density of background carriers in the active region on the quantum efficiency of InGaN-based light emitters using an extension of the ABC rate model. A method to determine experimentally whether a certain type of Auger recombination is relevant in InGaN quantum wells is derived from these considerations. Using this approach, we show that the physical process which is the dominant cause for the efficiency droop is superlinear in the electron density and can thus be assigned to nnp-Auger recombination.

• The Japan Society of Applied Physicsの論文
• 2013-11-25

著者

• WAGNER Joachim

  Fraunhofer-Institut fur Angewandte Festkorperphysik

• SABATHIL Matthias

  Osram Opto-Semiconductors GmbH

• Gomez-Iglesias Alvaro

  OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, 93055 Regensburg, Germany

• Galler Bastian

  OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, 93055 Regensburg, Germany

• Lugauer Hans-Jürgen

  OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, 93055 Regensburg, Germany

• Binder Michael

  OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, 93055 Regensburg, Germany

• Hollweck Richard

  OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, 93055 Regensburg, Germany

• Folwill Yannick

  OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, 93055 Regensburg, Germany

• Nirschl Anna

  OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, 93055 Regensburg, Germany

• Hahn Berthold

  OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, 93055 Regensburg, Germany

• Wagner Joachim

  Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, 79108 Freiburg, Germany

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• Experimental Determination of the Dominant Type of Auger Recombination in InGaN Quantum Wells
• Experimental Determination of the Dominant Type of Auger Recombination in InGaN Quantum Wells

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