Revealing the Defect Structure in Laterally Overgrown GaN Stripes Utilizing Photoelectrochemical Etching Techniques

概要

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Photoelectrochemical wet etching (PEC) in KOH solutions and subsequent scanning electron microscopy (SEM) was applied to investigate the defect structure in epitaxially lateral overgrown (ELOG) GaN. We have developed a cross-sectional PEC technique to easily reveal threading dislocations (TDs) at a spatial resolution of about 20 nm. The rich defect structure in the laterally overgrown regions will be discussed.
INSTITUTE OF PURE AND APPLIED PHYSICSの論文
2003-06-15