E-Beam Direct-Write in a Dry-Etched Recess Gate HEMT Process for GaAs/AlGaAs Circuits
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-10-20
著者
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Koehler K
Fraunhofer‐inst. Angewandte Festkoerperphysik Freiburg Deu
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HULSMANN A.
Fraunhofer-Institute for Applied Solid State Physics Tullastr
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KAUFEL G.
Fraunhofer-Institute for Applied Solid State Physics Tullastr
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KOHLER K.
Fraunhofer-Institute for Applied Solid State Physics Tullastr
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RAYNOR B.
Fraunhofer-Institute for Applied Solid State Physics Tullastr
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SCHNEIDER J.
Fraunhofer-Institute for Applied Solid State Physics Tullastr
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JAKOBUS T.
Fraunhofer-Institute for Applied Solid State Physics Tullastr
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Huelsmann A
Fraunhofer Inst. Angewandte Festkoerperphysik Feiburg Deu
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Kohler Klaus
Fraunhofer Institut Fur Angewandte Festkorperphysik
関連論文
- E-Beam Ditrct-Write in a Dry-Etched Recess Gate HEMT Process for GaAs/AlGaAs Circuits : Microfabrication and Physics
- E-Beam Direct-Write in a Dry-Etched Recess Gate HEMT Process for GaAs/AlGaAs Circuits
- Fabrication of High Breakdown Pseudomorphic Modulation Doped Field Effect Transistors Using Double Dry Etched Gate Recess Technology in Combination with E-Beam T-Gate Lithography