Extremely Low Resistance Ohmic Contacts to n-GaAs for AlGaAs/GaAs Heterojunction Bipolar Transistors
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概要
- 論文の詳細を見る
New AuGe/Ni/Ti/Au multi-layer structure ohmic contact to n-GaAs is reported which is suitable to fabricate fine emitter and collector patterns of AlGaAs/GaAs heterojunction bipolar transistors. According to an Auger electron spectroscopy investigation, a new alloying mechanism takes place in reducing contact resistivity. A contact resistivity of 3×10^<-7>Ω・cm^2 for 3×10^<18>cm^<-3> doped n-GaAs was achieved through optimum alloying at 370℃.
- 社団法人応用物理学会の論文
- 1984-08-20
著者
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Ishibashi T
Ntt Photonics Laboratories
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Sugeta T
Ntt A Tsugi Electrical Communication Laboratories
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Ito H
Ntt Photonics Laboratories Ntt Corporation
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ITO Hiroshi
Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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ISHIBASHI Tadao
Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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SUGETA Takayuki
Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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