Surface Contamination and Interface Abruptness on Si/SiGe Epitaxial Layers Related to Vacuum Quality of Chemical Vapor Deposition Reactors

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概要

• 論文の詳細を見る

• We investigated Ge contamination on the surface of Si/SiGe grown at 550℃ by using two low-pressure chemical vapor deposition (LPCVD) reactors. Ge of one tenth of a monolayer or less was found to be contaminated on the surface for the high base-pressure reactor but no Ge for the low base-pressure reactor. This report shows that Ge contaminants on the as-grown surface can be removed by etching silicon oxide a few nm thick formed by acid or thermal oxidization. The Si/SiGe interface abruptness was greatly improved (the 1/e decay length, λ=0.61nm) by LPCVD and not affected by the vacuum quality of the reactors. This is because the surface segregation of Ge is suppressed by H atoms terminating the surface that originate from the decomposition of Si_2H_6 and because the surface coverage of contaminants during growth is fairly less than that of the H. This paper also demonstrates the good structural quality and crystalline quality of the quantum wells by transmission electron microscope(TEM) views and photoluminescence (PL) spectra.

• 社団法人応用物理学会の論文
• 1995-08-15

著者

• FUJINAGA Kiyohisa

  NTT LSI Laboratories

• Fujinaga K

  Ntt Lsi Laboratories

関連論文

• Photoluminescence of Si_Ge_ Quantum Wells Grown on (100)Si by Low-Pressure Chemical Vapor Deposition
• Surface Contamination and Interface Abruptness on Si/SiGe Epitaxial Layers Related to Vacuum Quality of Chemical Vapor Deposition Reactors

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