Takeda Ryuji | Silicon Business Group, Covalent Materials Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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概要
- Takeda Ryujiの詳細を見る
- 同名の論文著者
- Silicon Business Group, Covalent Materials Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japanの論文著者
関連著者
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Takeda Ryuji
Silicon Business Group, Covalent Materials Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Yamabe Kikuo
Institute Of Applied Physics University Of Tsukuba
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Araki Koji
Department Of Applied Chemistry Faculty Of Engineering Kyushu Institute Of Technology
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Isogai Hiromichi
Silicon Business Group, Covalent Materials Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Izunome Koji
Silicon Business Group, Covalent Materials Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Matsushita Yoshiaki
Silicon Business Group, Covalent Materials Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Takahashi Naota
Department of Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan
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Zhao Xinwei
Department of Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan
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Takeda Ryuji
Silicon Business Group, Covalent Materials Corporation, Seiro, Niigata 957-0197, Japan
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Narita Masahiro
Silicon Business Group, Covalent Materials Corporation, Seiro, Niigata 957-0197, Japan
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Tani-ike Seiji
Core Technology Center, Covalent Materials Corporation, Hadano, Kanagawa 257-0031, Japan
著作論文
- Effect of Reflow Oxidation on Si Surface Roughness during High-Temperature Annealing
- Changes in Concentrations of Copper and Nickel on Boron-Doped Czochralski-Grown Silicon Surface at Room Temperature