Effect of Reflow Oxidation on Si Surface Roughness during High-Temperature Annealing
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概要
- 論文の詳細を見る
It is well known that a smooth surface of silicon (Si) wafers can be obtained by Si surface reconstruction using high-temperature annealing. However, there is a possibility that smooth Si surfaces are deteriorated by oxidation (called reflow oxidation) during unloading after the high-temperature annealing. Therefore, it is important to investigate the effect of oxidation on the surface steps and terraces on Si wafers at the atomic level during unloading. We have examined the effect of unloading temperature after Ar annealing on oxide formation on the surfaces of Si(100) and Si(110) substrates. The change in the surface roughness was also measured. Our results indicate a significant improvement with rms values of 0.01 nm for both Si(100) and Si(110) wafer surfaces upon low-temperature unloading. A very flat surface with an rms value of 0.046 nm was achieved for a Si(100) wafer.
- 2009-06-25
著者
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Araki Koji
Department Of Applied Chemistry Faculty Of Engineering Kyushu Institute Of Technology
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Isogai Hiromichi
Silicon Business Group, Covalent Materials Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Takeda Ryuji
Silicon Business Group, Covalent Materials Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Izunome Koji
Silicon Business Group, Covalent Materials Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Matsushita Yoshiaki
Silicon Business Group, Covalent Materials Corporation, 6-861-5 Higashiko, Seiro, Niigata 957-0197, Japan
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Takahashi Naota
Department of Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan
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Zhao Xinwei
Department of Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan
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