Atomic Structure Analysis of ErSi2 Nanowires Formed on Si(100) Substrates
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概要
- 論文の詳細を見る
ErSi2 nanowires were formed on Si(100) substrate by self-assembly. The wires were grown along the Si[011] and Si[$0\bar{1}1$] directions. Samples perpendicular and parallel to the growth direction of the wires were cut using a focused ion beam system for cross-sectional investigation. It was revealed that single-crystal ErSi2 nanowires had been formed. However, the crystal orientation between the wires was different. Samples grown at different temperatures were also investigated to analyze the growth mechanism of the ErSi2 nanowires. The growth process from the initial state to form ErSi2 nanowires is discussed.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-06-25
著者
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Katayama Yusuke
Department Of Cardiovascular Medicine Okayama University
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MEGURO Takashi
The Institute of Physical and Chemical Research (RIKEN)
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Zhao Xinwei
Department of Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan
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Kobayashi Tomohiro
The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
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Yokoyama Satoshi
Department of Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan
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Katayama Yusuke
Department of Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan
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