Rapid Recrystallization of Amorphous Silicon Utilizing Very-High-Frequency Microplasma Jet at Atmospheric Pressure
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概要
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The rapid recrystallization of amorphous silicon (a-Si) utilizing a very-high-frequency (VHF) plasma jet of argon (Ar) at atmospheric pressure is investigated. A highly crystallized polycrystalline Si film is synthesized by optimizing the translating velocity of the substrate stage and the flow rate of argon. The temperature of the plasma exposure area reaches $1350\pm 300$ °C and the recrystallization of a-Si proceeded with time constants of 30–50 ms. The effects of the translating velocity of the substrate stage and the flow rate of argon on the rapid recrystallization of a-Si are demonstrated along with its mechanism.
- 2006-10-30
著者
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Shirai Hajime
Department Of Functional Materials And Science Faculty Of Engineering Saitama University
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Sakurai Yusuke
Department Of Physics And Functional Materials Science The Graduate School Of Science And Technology
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Kobayashi Tomohiro
The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
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Kobayashi Tomohiro
The Institute of Physics and Chemical Research, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
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Ryo Mina
Department of Physics and Functional Materials Science, The Graduate School of Science and Technology, Saitama University, 255 Shimo-Okubo, Sakura, Saitama 338-8570, Japan
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SAKURAI Yusuke
Department of Functional Materials Science, Faculty of Engineering, Saitama University
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Sakurai Yusuke
Department of Physics and Functional Materials Science, The Graduate School of Science and Technology, Saitama University, 255 Shimo-Okubo, Sakura, Saitama 338-8570, Japan
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Shirai Hajime
Department of Physics and Functional Materials Science, The Graduate School of Science and Technology, Saitama University, 255 Shimo-Okubo, Sakura, Saitama 338-8570, Japan
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