Photoluminesence Properties of Nanocrystalline Si Dots Fabricated by RF Plasma-Enhanced Chemical Vapor Deposition of SiCl_4 and H_2 Mixture : Optical Properties of Condensed Matter
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概要
- 論文の詳細を見る
Luminescent nanocrystalline Si (nc-Si) dots were fabricated directly on thermally grown (th-)SiO_2 at temperatures below 200℃ by the conventional rf plasma-enhanced chemical vapor deposition (PE-CVD) of silicontetrachloride SiCl_4 and H_2 mixture. The as-deposited Si dot exhibits weak photoluminescence (PL) in the visible region, which is composed of two broad band peaks at 1.38 eV and 1.48 eV. The storage in air leads to strong PL along with the blueshift of peak energy for the nc-Si dot < 10 nm in diameter. Fourier transform attenuated total reflection absorption spectroscopy (FTIR-ATR) study revealed that the spontaneous oxidation proceeded over a duration of 70 h and tended to saturate at the dot size of 3-5 nm. The relationship among the PL intensity, blueshift of PL peak energy, surface termination species and blueshift of absorption edge during oxidation is demonstrated.
- 社団法人応用物理学会の論文
- 2002-10-15
著者
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SHIRAI Hajime
Department of Functional Materials Science, Faculty of Engineering
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Fujimura Yukihiro
Department Of Functional Materials Science Faculty Of Engineering Saitama University
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Shirai Hajime
Department Of Functional Materials And Science Faculty Of Engineering Saitama University
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FUJIMURA Yukihiko
Department of Functional Materials and Science, Faculty of Engineering, Saitama University
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Fujimura Yukihiro
Department Of Electronic Engineering Graduate School Of Engineering Gunma University
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Fujimura Y
Department Of Functional Materials And Science Faculty Of Engineering Saitama University
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Fujimura Yukihiro
Department of Functional Materials and Science, Faculty of Engineering, Saitama University
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