Spatial Distribution of the High-Density Microwave Plasma and Its Effect on Crystal Silicon Film Growth
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概要
- 論文の詳細を見る
The spatial distribution of the high-density and low-temperature microwave plasma and its effect on the fast deposition of highly crystallized microcrystalline silicon (μc-Si:H) film are demostrated through systematic deposition and plasma diagnostics studies. The best film crystallinity is obtained under the condition in which the hot electron population and the distribution of the ion beam energy impinging on the growing surface are minimum. The intentional control of the ion beam energy is also attempted using a mesh grid electrode to suppress the ion bombardment during film growth. A low and uniform ion beam energy is effective in promoting the film crystallinity with less surface roughness and bulk inhomogeneities.
- 社団法人応用物理学会の論文
- 2000-08-01
著者
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SHIRAI Hajime
Department of Functional Materials Science, Faculty of Engineering
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UEYAMA Hiroyuki
Nihon Koshuha Co., Ltd.
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Shirai Hajime
Department Of Functional Materials And Science Faculty Of Engineering Saitama University
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Ueyama H
Nihon Koshuha Co. Ltd.
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Yoshino Koichi
Department of Epidemiology and Public Health, Tokyo Dental College
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Yoshino Koichi
Department Of Epidemiology And Public Health Tokyo Dental College
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SAKUMA Yoshikazu
Department of Functional Materials Science, Faculty of Engineering, Saitama University
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Sakuma Yoshikazu
Department Of Functional Materials Science Faculty Of Engineering Saitama University
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Ueyama Hiroyuki
Nihon Koshuha Co. Ltd.
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