Surface Chemistry of Si:H:Cl Film Formation by RF Plasma-Enhanced Chemical Vapor Deposition of SiH2Cl2 and SiCl4
スポンサーリンク
概要
- 論文の詳細を見る
The surface chemistry of the Si:H:Cl film formation by rf plasma-enhanced chemical vapor deposition of SiH2Cl2 and SiCl4 systems is demonstrated at low tempeatures of 90–140°C. There exists a threshold substrate temperature $T_{\text{th}}$ for the phase transition from amorphous to nanocrystalline silicon, nc-Si, which decreases from 110°C to 70°C with increasing H2 flow rate in the SiH2Cl2 system. On the other hand, $T_{\text{th}}$ is almost independent of the H2 flow rate in the SiCl4 system along with a higher disorder in the a-Si network than in the SiH2Cl2 system. The degree of the chlorine termination in SiClx ($x=1$, 2) is at the growing top surface highly related to the degree of disorder in the Si-network. The disorder-induced phase transition to nanocrystalline is demonstrated from film deposition studies from the SiH2Cl2 and SiCl4 systems.
- Japan Society of Applied Physicsの論文
- 2003-10-01
著者
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Hashimoto Koji
Department Of Dermatology Ehime University Graduate School Of Medicine
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ITO Tetsuji
Department of Functional Materials Science, Faculty of Engineering
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SHIRAI Hajime
Department of Functional Materials Science, Faculty of Engineering
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Ito Tetsuji
Department Of Functional Materials Science Faculty Of Engineering
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Ito Tetsuji
Department Of Functional Materials Science Faculty Of Engineering Saitama University
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Shirai Hajime
Department Of Functional Materials Science Faculty Of Engineering Saitama University
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Shirai Hajime
Department Of Functional Materials And Science Faculty Of Engineering Saitama University
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Hashimoto Koji
Department Of Functional Materials Science Faculty Of Engineering Saitama University
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Hashimoto Koji
Department Of Chemistry Faculty Of Science Kanazawa University
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