Photoluminescence and Optical Characterizations of Nanocrystalline Silicon Dots Formed by Plasma-Enhanced Chemical Vapor Deposition
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概要
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We report the photoluminescence (PL) and optical properties of nanocrystalline silicon (nc-Si) dots grown on thermally grown SiO2 by rf (13.56 MHz) plasma-enhanced chemical vapor deposition of tetrachlorosilane (SiCl4) and H2. The nc-Si dots fabricated at temperatures of ${\sim}120$°C show relatively strong emissions in the visible range of 1.3–2.0 eV. The PL peak energy systematically shifts to lower energy from 1.75 eV to 1.45 eV by increasing the deposition period, which is due to the size distribution of nc-Si dots. On the other hand, the PL efficiency depends on both the deposition period and subsequent oxidation methods such as the storage in air, and pure water and HCl acid rinse treatments. The PL efficiency is markedly improved by the pure water rinse rather than by the storage in air, although a prolonged water rinse deteriorates the PL efficiency. On the other hand, the HCl acid rinse results in marked enhancement of PL efficiency with high stability. The effects of deposition conditions and surface treatment on the PL efficiency, stability and optical properties are demonstrated.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-10-15
著者
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Kurosaki Ken-ichi
Department Of Functional Materials Science Faculty Of Engineering Saitama University
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Shirai Hajime
Department Of Functional Materials And Science Faculty Of Engineering Saitama University
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Nakao Aiko
The Institute Of Physical And Chemical Research (riken)
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Nakao Aiko
The Institute of Physics and Chemical Research (RIKEN), Wako, Saitama 351-0198, Japan
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HASHIMOTO KOJI
Department of Cardiovascular and Digestive Surgery, Shimane University School of Medicine
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Kurosaki Ken-ichi
Department of Functional Materials Science, Faculty of Engineering, Saitama University, 255 Shimo-Okubo, Sakura, Saitama 338-8570, Japan
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