Plasma Parameters for Fast Deposition of Highly Crystallized Microcrystalline Silicon Films Using High-Density Microwave Plasma

概要

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We have studied microcrystalline silicon ($\mu$c-Si) film growth using a high-density, low-temperature microwave plasma (MWP) of a SiH4–H2 mixture for fast deposition of highly crystallized $\mu$c-Si films with low defect density. A very high deposition rate of ${\sim}65$ Å/s has been achieved at a SiH4 concentration of 67% diluted by H2 with a high Raman crystallinity of $I_{\text{c}}/I_{\text{a}}>3$ and a low defect density of $(1--2)\times 10^{16}$ cm-3 by adjusting the plasma condition. In contrast to the case of a conventional rf plasma, the defect density of the $\mu$c-Si films strongly depends on substrate temperature, $T_{\text{s}}$, increasing with $T_{\text{s}}$ even at a $T_{\text{s}}$ below 300°C. This suggests that the real surface temperature at the growing surface was higher than the monitored value. A sufficient supply of deposition precursors, such as SiH3, at the growth surface under an appropriate ion bombardment was effective for the fast deposition of highly crystallized $\mu$c-Si films as well as for the suppression of the incubation and transition layers at the initial growth stage.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2006-02-15