Synthesis of Well-Aligned Carbon Nanotubes Using a High-Density RF Inductive Coupling Plasma
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概要
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Growth of vertically well-aligned carbon nanotubes was demonstrated utilizing high-density rf inductive coupling plasma-enhanced chemical vapor deposition of methane. A sufficient supply of CH4-related precursors as well as a rapid large number of dangling bonds at the top surface due to a negative substrate dc bias are essential for promoting the deposition rate of vertically well-aligned carbon nanotubes. Rapid deposition at 60 Å/s of vertically well-aligned multi-walled carbon nanotubes was achieved using pure methane (50 sccm) by adjusting the plasma conditions.
- 2005-04-15
著者
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Shirai Hajime
Department Of Functional Materials And Science Faculty Of Engineering Saitama University
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Kobayashi Tomohiro
The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
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Kobayashi Tomohiro
The Institute of Physics and Chemical Research (RIKEN), Wako, Saitama 351-0198, Japan
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Kikuchi Tomoyuki
Department of Functional Materials Science, Faculty of Engineering, Saitama University, 255 Shimo-Okubo, Sakura, Saitama 338-8570, Japan
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