Formation and Structure Analysis of Very Long ErSi2 Nanowires Formed on Si(110) Substrates
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概要
- 論文の詳細を見る
Very long ErSi2 nanowires were formed on a Si(110) substrate by a self-assembly process. The wires were highly parallel and grew in the Si$\langle 011\rangle$ direction. Nanowires with lengths more than 50 μm were fabricated. It was observed by transmission electron microscopy that the wires were hexagonal crystal type, having their $c$-axis ($\langle 0001\rangle$ direction) perpendicular to the Si(112) plane. Then the nanowires were deeply buried in the Si(110) surface. Energy-dispersive X-ray spectroscopy measurements indicated that the nanowires had a ErSi2 chemical composition. Electrical conductivity measurement of the nanowires formed on high-resistivity Si substrates showed that the ErSi2 nanowires were good conductors at room temperature. The ErSi2 nanowire might be a promising candidate in nanometer-sized inter connection.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-06-30
著者
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MEGURO Takashi
The Institute of Physical and Chemical Research (RIKEN)
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Zhao Xinwei
Department of Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan
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Zhao Xinwei
Department of Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan
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Watanabe Ryouki
Department of Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan
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Harako Susumu
Department of Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan
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Kuzuu Takashi
Department of Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan
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Kouno Kazuki
Department of Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan
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Kobayashi Tomohiro
The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
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