Effects of Chamber Wall Heating and Quartz Window on Fast Deposition of Microcrystalline Silicon Films by High-Density Microwave Plasma
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概要
- 論文の詳細を見る
The effects of chamber wall heating and quartz window on oxygen contamination and film crystallinity have been demonstrated in a high-density microwave plasma of a SiH4 and H2 mixture. With increasing chamber wall temperature, the film crystallinity deteriorates with higher concentration of oxygen impurity. The content of the oxygen impurity from the quartz window in the films is also significant with increasing working pressure and flow rate ratio of H2 to SiH4. The combination of higher flux of SiH4 and appropriate pressure of 150–300 mTorr is effective in suppressing the oxygen impurity while maintaining high film crystallinity. As a result, $\mu$c-Si film with a low defect density of $1--1.2\times 10^{16}$ cm-3 has been fabricated at a deposition rate of ${\sim}50$ Å/s.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-12-15
著者
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NAKAJIMA Masanobu
Department of General Surgical Science, and 21st Century COE Program, Graduate School of Medicine, G
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Jia Haijun
Department Of Functional Materials Science Faculty Of Engineering Saitama University
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Shirai Hajime
Department Of Functional Materials Science Faculty Of Engineering Saitama University
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Shirai Hajime
Department Of Functional Materials And Science Faculty Of Engineering Saitama University
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Shirai H
Department Of Functional Materials Science Faculty Of Engineering Saitama University
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Nakao Aiko
The Institute Of Physical And Chemical Research (riken)
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Nakajima Masanobu
Department Of Functional Materials Science Faculty Of Engineering Saitama University
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