Fast Deposition of Microcrystalline Silicon Using High-Density SiH_4 Microwave Plasma

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概要

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• A novel microwave discharge utilizing a spokewise antenna was applied for the fast deposition of hydrogenated microcrystalline silicon (μc-Si:H) film from SiH_4 and Ar without the H_2 dilution method. Systematic deposition studies were employed with total pressure, H_2 dilution ratio and flow rate of SiH_4, Fr[SiH_4], as variables, combined with optical emission spectroscopy (OES) and Langmuir probe characterizations. It was found that the deposition rate exhibits a maximum at 40-50 mTorr at the axial distance of 10 cm from the quartz glass plate and the film crystallinity strongly depend on the total pressure. Correlation among OES signal intensity, SiH, the intensity ratio, I_<Hα>/I_<Si^*>, deposition rate and film crystallinity were demonstrated. By combining the SiH_4 depletion and lower pressure conditions, a high deposition rate of 40 Å/s was achieved in μc-Si:H growth with high crystallinity and photosensitivity from SiH_4 and Ar plasma.

• 社団法人応用物理学会の論文
• 1999-12-15

著者

• SHIRAI Hajime

  Department of Functional Materials Science, Faculty of Engineering

• UEYAMA Hiroyuki

  Nihon Koshuha Co., Ltd.

• Shirai Hajime

  Department Of Functional Materials And Science Faculty Of Engineering Saitama University

• Ueyama H

  Nihon Koshuha Co. Ltd.

• FUKAI Chisato

  Department of Functional Materials Science, Faculty of Engineering, Saitama University

• SAKUMA Yoshikazu

  Department of Functional Materials Science, Faculty of Engineering, Saitama University

• MORIYA Yoshimizu

  Department of Functional Materials Science, Faculty of Engineering, Saitama University

• Fukai C

  Saitama Univ. Saitama Jpn

• Fukai Chisato

  Department Of Functional Materials Science Faculty Of Engineering Saitama University

• Moriya Yoshinori

  Department Of Functional Materials Science Faculty Of Engineering Saitama University

• Sakuma Yoshikazu

  Department Of Functional Materials Science Faculty Of Engineering Saitama University

• Ueyama Hiroyuki

  Nihon Koshuha Co. Ltd.

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