The Generation of High-Density Microwave Plasma and Its Application to Large-Area Microcrystalline Silicon Thin Film Formation

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概要

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• A low-temperature, uniform, and high-density microwave plasma (2.45 GHz) is produced utilizing a spokewise antenna with no use of magnetic field. The plasma maintains a uniform state in Ar low pressure of 10 mTorr with high electron density, >10^<11> cm^<-3>, and temperature less than of 2.5 eV within ±6% over a 16 cm diameter. Highly crystallized, photoconductive, hydrogenated microcrystalline silicon, μc-Si:H film is produced from dichlorosilane (SiH_2Cl_2), H_2 and Ar mixture at a high deposition rate of more than 5Å/s. This plasma source has high potential not only for etching but also for the large-area film deposition processes.

• 社団法人応用物理学会の論文
• 1998-09-15

著者

• Arai Takeshi

  Faculty Of Pharmaceutical Sciences Josai University

• UEYAMA Hiroyuki

  Nihon Koshuha Co., Ltd.

• Shirai Hajime

  Faculty Of Engineering Saitama University

• Ueyama Hiroyuki

  Nihon Koshuha Co. Ltd.

• Arai Takeshi

  Faculty Of Engineering Saitama University

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• Novel High Density Microwave Plasma Utilizing an Internal Spoke Antenna for Fast Deposition of Microcrystalline Silicon Films : Nuclear Science, Plasmas, Electric Dischanges
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