Itokawa Hiroshi | Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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概要
- Itokawa Hiroshiの詳細を見る
- 同名の論文著者
- Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japanの論文著者
関連著者
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Itokawa Hiroshi
Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Ichiro Mizushima
Advanced Microelectronics Center, Toshiba Corp., Shinsugita-cho, Isogo-ku, Yokohama 235-8582, Japan
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Ohta Akio
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Miyazaki Seiichi
Graduate School Of Advanced Sciences And Matters Hiroshima University
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Ikeda Mitsuhisa
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Nobutoshi Aoki
Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Agatsuma Yuji
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Nigata 940-2188, Japan
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Aoki Nobutoshi
Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Naotaka Uchitomi
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Nigata 940-2188, Japan
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Ichiro Mizushima
Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Hiroshi Itokawa
Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Hiroshi Itokawa
Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Mizushima Ichiro
Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Ichiro Mizushima
Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Miyano Kiyotaka
Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Oshima Yasunori
Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Kyoichi Suguro
Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Kyoichi Suguro
Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Yasunori Oshima
Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Ohta Akio
Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
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Kiyotaka Miyano
Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Ikeda Mitsuhisa
Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
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Ikeda Mitsuhisa
Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Yuji Agatsuma
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Nigata 940-2188, Japan
著作論文
- Contribution of Carbon to Growth of Boron-Containing Cluster in Heavily Boron-Doped Silicon
- Carbon Incorporation into Substitutional Silicon Site by Molecular Carbon Ion Implantation and Recrystallization Annealing as Stress Technique in n-Metal–Oxide–Semiconductor Field-Effect Transistor
- Contribution of Carbon to Activation and Diffusion of Boron in Silicon