Ichiro Mizushima | Advanced Microelectronics Center, Toshiba Corp., Shinsugita-cho, Isogo-ku, Yokohama 235-8582, Japan
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概要
- Ichiro Mizushima の詳細を見る
- 同名の論文著者
- Advanced Microelectronics Center, Toshiba Corp., Shinsugita-cho, Isogo-ku, Yokohama 235-8582, Japanの論文著者
関連著者
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Ichiro Mizushima
Advanced Microelectronics Center, Toshiba Corp., Shinsugita-cho, Isogo-ku, Yokohama 235-8582, Japan
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Itokawa Hiroshi
Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Ichiro Mizushima
Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Nobutoshi Aoki
Advanced Microelectronics Center, Toshiba Corp., Shinsugita-cho, Isogo-ku, Yokohama 235-8582, Japan
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Nobutoshi Aoki
Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Agatsuma Yuji
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Nigata 940-2188, Japan
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Aoki Nobutoshi
Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Naotaka Uchitomi
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Nigata 940-2188, Japan
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Mizukami Makoto
Corporate Research and Development Center, Toshiba Corp., Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Nishihara Kiyohito
Advanced Microelectronics Center, Toshiba Corp., Shinsugita-cho, Isogo-ku, Yokohama 235-8582, Japan
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Ishida Hirokazu
Advanced Microelectronics Center, Toshiba Corp., Shinsugita-cho, Isogo-ku, Yokohama 235-8582, Japan
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Fumiki Aiso
Advanced Microelectronics Center, Toshiba Corp., Shinsugita-cho, Isogo-ku, Yokohama 235-8582, Japan
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Tadashi Iguchi
Advanced Microelectronics Center, Toshiba Corp., Shinsugita-cho, Isogo-ku, Yokohama 235-8582, Japan
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Daigo Ichinose
Advanced Microelectronics Center, Toshiba Corp., Shinsugita-cho, Isogo-ku, Yokohama 235-8582, Japan
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Atsushi Fukumoto
Advanced Microelectronics Center, Toshiba Corp., Shinsugita-cho, Isogo-ku, Yokohama 235-8582, Japan
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Masaki Kondo
Advanced Microelectronics Center, Toshiba Corp., Shinsugita-cho, Isogo-ku, Yokohama 235-8582, Japan
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Takashi Izumida
Advanced Microelectronics Center, Toshiba Corp., Shinsugita-cho, Isogo-ku, Yokohama 235-8582, Japan
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Hiroyoshi Tanimoto
Advanced Microelectronics Center, Toshiba Corp., Shinsugita-cho, Isogo-ku, Yokohama 235-8582, Japan
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Toshiyuki Enda
Advanced Microelectronics Center, Toshiba Corp., Shinsugita-cho, Isogo-ku, Yokohama 235-8582, Japan
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Hiroshi Watanabe
Corporate Research and Development Center, Toshiba Corp., Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Shuichi Toriyama
Corporate Research and Development Center, Toshiba Corp., Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Takashi Suzuki
Advanced Microelectronics Center, Toshiba Corp., Shinsugita-cho, Isogo-ku, Yokohama 235-8582, Japan
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Fumitaka Arai
Advanced Microelectronics Center, Toshiba Corp., Shinsugita-cho, Isogo-ku, Yokohama 235-8582, Japan
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Hirokazu Ishida
Advanced Microelectronics Center, Toshiba Corp., Shinsugita-cho, Isogo-ku, Yokohama 235-8582, Japan
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Hiroshi Itokawa
Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Hiroshi Itokawa
Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Ichiro Mizushima
Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Kiyohito Nishihara
Advanced Microelectronics Center, Toshiba Corp., Shinsugita-cho, Isogo-ku, Yokohama 235-8582, Japan
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Miyano Kiyotaka
Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Oshima Yasunori
Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Kyoichi Suguro
Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Kyoichi Suguro
Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Yasunori Oshima
Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Kiyotaka Miyano
Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Makoto Mizukami
Corporate Research and Development Center, Toshiba Corp., Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Yuji Agatsuma
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Nigata 940-2188, Japan
著作論文
- Carbon Incorporation into Substitutional Silicon Site by Molecular Carbon Ion Implantation and Recrystallization Annealing as Stress Technique in n-Metal–Oxide–Semiconductor Field-Effect Transistor
- Depletion-Type Cell-Transistor on Partial Silicon-on-Insulator Substrate for $2\times$ nm Generation Floating-Gate NAND Electrically Erasable Programmable Read Only Memory
- Contribution of Carbon to Activation and Diffusion of Boron in Silicon