Contribution of Carbon to Activation and Diffusion of Boron in Silicon

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It is well-known that the coimplantation of carbon (C) in a concentration range comparable to the range of boron (B) concentrations could suppress B diffusion, resulting in a boxlike B profile. Substitutional C atoms can capture excess self-interstitial Si atoms and suppress the diffusion of ion-implanted intersitial-type dopants such as B in silicon (Si). However, the effect of C on activation properties in wide C and B concentration ranges has not been sufficiently investigated. In this work, in the experiment in wide C and B concentration ranges, it was clarified for the first time that the B activation ratio of Si increases or decreases varies depending on the concentration of C incorporated. The activation ratio of the B activation layer was increased markedly by C incorporation in the case of light B implantation such as in the concentration range of $8\times 10^{19}$ to $3\times 10^{20}$ cm-3. This might be attributed to the interaction of C with Si interstitials and the suppression of the boron Si-interstitial clustering induced by C incorporation. In contrast, in the case of heavy B implantation such as at a $1\times 10^{21}$ cm-3 concentration, the activation ratio was decreased slightly by C incorporation. When stable B-containing clusters and precipitates were formed at high B concentrations, the effect of C incorporation on activation ratio was considered to be small.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2010-04-25

Contribution of Carbon to Activation and Diffusion of Boron in Silicon

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