Giant Resistivity Anomaly in A15 Nb_3(Ge, Si) Superconductive Films with Compositionally Modulated Superstructure
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概要
- 論文の詳細を見る
A15 Nb_3(Ge, Si) films with compositionally modulated superstructure have been synthesized by sputtering from rotated targets. Some of the films exhibit a remarkable maximum of resistivity in the vicinity of the onset temperature of superconductive transition between 7 K and 19 K on the abscissa, when the dc current in the resistivity measurement is low enough. The resistivity peak height vs current plots are similar to those for the giant resistivity anomaly recently observed on TaSe_3. The anomaly seems closely correlated to the multilayered structure containing ultrathin superconductive layers.
- 社団法人応用物理学会の論文
- 1985-05-20
著者
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Ikeda Makoto
Faculty Of Technology Tokyo University Of Agriculture And Technology
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Ikeda M
Sony Corporation Research Center
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Inayoshi Muneto
Department Of Quantum Engineering School Of Engineering Nagoya Univeristy
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Ikeda M
Toshiba Corp. Kawasaki Jpn
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Yamamoto Hiroshi
Department Of Energy Engineering And Science Nagoya University
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Ikeda Masanori
Department Of Electronics College Of Science And Technology Nihon University
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TANAKA Masaichi
Department of Electronics, College of Science and Technology, Nihon University
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Tanaka Masaichi
Department Of Electronic Engineering College Of Sci. & Technol. Nihon University
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Ikeda Masanori
Department Of Electrical And Electronic Engineering College Of Engineering Nihon University
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Yamamoto Hiroshi
Departmemt Of Chemical Engineering University Of Tokyo
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