Nonuniform Reactive Ion Etching of MnAs/GaAs Heterostructures: MnAs Nanodots and GaAs Nanocolumns
スポンサーリンク
概要
- 論文の詳細を見る
Under certain conditions, the reactive ion etching of MnAs layers grown on GaAs substrates proceeds in a remarkably nonuniform manner. Mounds are formed on the surface of the MnAs layers during the etching. They eventually result in submicron-scale islands when the etch front reaches the MnAs/GaAs interface. Because of the one-order-of-magnitude smaller etch rate for MnAs than that for GaAs, GaAs columns having large height-to-width ratios are subsequently generated when the etching further progresses. The nonuniform etching takes place when the MnAs surface is partly covered with a resist, indicating the inhomogeneous migration of etching species is crucial.
- 2004-05-15
著者
-
Takagaki Yukihiko
Paul Drude Institute For Solid State Electronics
-
Daweritz Lutz
Paul Drude Institute For Solid State Electronics
-
WIEBICKE Edith
Paul Drude Institute for Solid State Electronics
-
Ploog Klaus
Paul Drude Institute
-
Takagaki Yukihiko
Paul Drude Institute for Solid State Electronics, Hausvogteiplatz 5-7, Berlin 10117, Germany
-
Ploog Klaus
Paul Drude Institute for Solid State Electronics, Hausvogteiplatz 5-7, Berlin 10117, Germany
関連論文
- Novel GaAs Quantum Wire and Dot Arrays by Hydrogen-Assisted Molecular Beam Epitaxy on High-Index Substrates
- Magnetic and Electric Field Effects of Photoluminescence of Excitons Bound to Nitrogen Atom Pairs in GaAs
- Nonuniform Reactive Ion Etching of MnAs/GaAs Heterostructures : MnAs Nanodots and GaAs Nanocolumns
- Giant Surface Acoustic Wave Attenuation in the Quantum Hall Regime Induced by a DC Current
- Giant Surface Acoustic Wave Attenuation in the Quantum Hall Regime Inducedby a DC Current
- Surface-Acoustic-Wave Delay Line at 24GHz Using the Guided Rayleigh Mode in AlN/SiC Structure
- Nonuniversal Magnetic-Field Correlation of Conductance Fluctuations in Quantum Cavities Attached to a Superconductor : Condensed Matter: Electronic Properties, etc.
- Optical Properties of Dynamically-Modulated Dots and Wires Formed by Surface Acoustic Waves
- GaN quantum dots, quantum wires and quantum discs with novel optoelectronic properties
- Nonuniform Reactive Ion Etching of MnAs/GaAs Heterostructures: MnAs Nanodots and GaAs Nanocolumns
- Magnetic and Electric Field Effects of Photoluminescence of Excitons Bound to Nitrogen Atom Pairs in GaAs
- Surface-Acoustic-Wave Delay Line at 24 GHz Using the Guided Rayleigh Mode in AlN/SiC Structures
- Giant Surface Acoustic Wave Attenuation in the Quantum Hall Regime Induced by a DC Current