Copper Damascene Interconnection with Tungsten Silicon Nitride Diffusion Barrier Formed by Electron Cyclotron Resonance Plasma Nitridation

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概要

• 論文の詳細を見る

• This paper describes the application of tungsten silicon nitride (WSiN) formed by electron cyclotron nitridation (ECR) plasma nitridation as a diffusion barrier for copper (Cu) damascene interconnection. WSiN(6 nm)/WSi_x(14 nm) multi-layer prevents Cu diffusion well when WSiN is formed with RF bias application to the substrate. The RF power increases the nitrogen concentration of the WSiN and enhances its amorphousness, which lead to the improved barrier capability. WSiN can be formed inside the trench, and the WSiN on the trench side walls prevents Cu diffusion. The use of this extremely thin barrier metal suppresses the increase of interconnection resistivity.

• 社団法人応用物理学会の論文
• 1999-04-30

著者

• HIRATA Akihiko

  NTT Microsystem Integration Labs., NTT Corporation

• MACHIDA Katsuyuki

  NTT Advanced Technology Corporation

• Maeda Masahiko

  Ntt System Electronics Laboratories

• Hirata Akihiko

  Ntt Microsystem Integration Labs. Ntt Corporation

• Kyuragi H

  Ntt Microsystem Integration Laboratories Ntt Corporation

• HIRATA Akihiko

  NTT System Electronics Laboratories

• MACHIDA Katsuyuki

  NTT System Electronics Laboratories

• AWAYA Nobuyoshi

  NTT System Electronics Laboratories

• KYURAGI Hakaru

  NTT System Electronics Laboratories

• Awaya Nobuyoshi

  Ntt System Electronics Laboratories:(present Address)sharp Corporation Vlsi Development Laboratories

• Machida K

  Ntt Advanced Technology Corporation

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