Self-Aligned Passivation Technology for Copper Interconnection Using Copper-Aluminum Alloy

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概要

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• A self-aligned passivation procedure for fabricating copper interconnection has been developed using Al-Cu alloy formation. With annealing at 350℃, very thin aluminum on the exposed copper wire reacts with copper to form Al-Cu intermetallic compound, whereas the underlying copper remains as a pure metal. Using the difference in the electrode potential between pure Al and the intermetallic compound, the unreacted aluminum on SiO_2 can be selectively removed by acid treatment. Additional annealing at 350℃ in the gaseous mixture of H_2 and O_2 creates a thin layer of aluminum oxide on the compound surface, This improves the resistance of the copper wire to oxidation. The passivated copper film is very stable at 250℃ in air with only a small increase in resistivity (about 5%), while the sheet resistance of pure copper increases dramatically with time, The passivation also improves the adhesiveness of insulating film on the surface.

• 1997-03-30

著者

• KOBAYASHI Toshio

  NTT System Electronics Laboratories

• AWAYA Nobuyoshi

  NTT System Electronics Laboratories

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• Self-Aligned Passivation Technology for Copper Interconnection Using Copper-Aluminum Alloy

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