The Effect of Film Texture and Zirconium Diffusion on Reliability Against Electromigration for CVD Copper

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概要

• 論文の詳細を見る
• 1997-09-16

著者

• KOBAYASHI Toshio

  NTT System Electronics Laboratories

• AWAYA Nobuyoshi

  NTT System Electronics Laboratories

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• Evaluation of Hot-Hole-Induced Interface Traps at the Tunnel-SiO_2 (3.5 nm)/Si Interface by the Conductance Technique
• Effect of Thin-Film Texture and Zirconium Diffusion on Reliability against Electromigration in Chemical-Vapor-Deposited Copper Interconnects
• The Effect of Film Texture and Zirconium Diffusion on Reliability Against Electromigration for CVD Copper
• Self-Aligned Passivation Technology for Copper Interconnection Using Copper-Aluminum Alloy

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