Oishi Toshiyuki | Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan

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概要

関連著者

OISHI Toshiyuki
Advanced Technology R&D Center, Mitsubishi Electric Corporation
Tokuda Yasunori
Advanced R&d Technology Center Mitsubishi Electric Corporation
Nanjo Takuma
Advanced Technology R&d Center Mitsubishi Electric Corporation
Suita Muneyoshi
Advanced Technology R&d Center Mitsubishi Electric Corp.
Abe Yuji
Advanced R&d Technology Center Mitsubishi Electric Corporation
Kawase Kazumasa
Advanced Technology R&d Center Mitsubishi Electric Corporation
Abe Yuji
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
OISHI Toshiyuki
Advanced Technology R & D Center, Mitsubishi Electric Corporation
Oishi Toshiyuki
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
Suita Muneyoshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan

著作論文

X-ray Photoelectron Spectroscopy Study of the Origin of the Improved Device Performance by a Thin Al Layer Insertion between AlGaN and Schottky Gate on the AlGaN/GaN High-Electron-Mobility Transistor

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