Stress Relaxation in Reactively Sputter-Deposited TiO_xN_y Films
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概要
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Internal stress in TiO_xN_y films sputter-deposited on negatively biased silicon wafers in an Ar-N_2-O_2 gas mixture was measured by a substrate deflection method. X-ray diffraction (XRD), Auger electron spectroscopy (AES) and field emission scanning electron microscopy (FE-SEM) were also employed for studying structural features of the films. TiN films deposited under an oxygen-free condition have high compressive stress (7.8 GPa for bias 90 V), and the compressive stress in TiO_xN_y films decreases markedly with increasing oxygen concentration and becomes slightly tensile at an oxygen flow ratio of more than 1%. It is suggested that the relaxation of the compressive stress is due to the decrease in the latice parameter caused by substituting nitrogen atoms with oxygen ones and the formation of an amorphous phase in the TiO_xN_y films.
- 社団法人応用物理学会の論文
- 1991-09-15
著者
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Maruno Shigeo
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Jin Ping
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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