KAWAMURA Yuichi | Frontier Science Innovation Center Osaka Prefecture University
スポンサーリンク
概要
関連著者
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KAWAMURA Yuichi
Frontier Science Innovation Center Osaka Prefecture University
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Kawamura Yuichiro
Department Of Materials Science And Engineering Graduate School Of Engineering Osaka University
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Inoue N
Department Of Electrical And Electronic Engineering National Defense Academy
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Inoue Narumi
Superconductivity Research Laboratory International Superconductivity Technology Center
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NAKAGAWA Tomokatsu
Frontier Science Innovation Center Osaka Prefecture University
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INOUE Naohisa
Frontier Science Innovation Center Osaka Prefecture University
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Kawamura Yuichi
Research Institute For Advanced Science And Technology Osaka Prefecture University
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INOUE Naohisa
Research Institute for Advanced Science and Technology, Osaka Prefecture University
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Inoue Naohisa
Research Institute For Advanced Science And Technology Osaka Prefecture University
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HIGASHINO Toshiyuki
Research Institute for Advanced Science and Technology, Osaka Prefecture University
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Higashino T
Research Institute For Advanced Science And Technology Osaka Prefecture University
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AMANO Masanobu
Research Institute for advanced Science and Technology, Osaka Prefecture University
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Amano M
Toshiba Corp. Kawasaki Jpn
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Amano Masanobu
Research Institute For Advanced Science And Technology Osaka Prefecture University
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FUJIMOTO Masato
Research Institute for Advanced Science and Technology, Osaka Prefecture University
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Fujimoto Masato
Research Institute For Advanced Science And Technology Osaka Prefecture University
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Ouchi Kazuhiro
Research Institute Of Advanced Technology Akita Prefectural R & D Center:faculty Of Systems Scie
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GOMYO Akiko
Fundamental and Environmental Research Laboratories, NEC Corporation
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Gomyo Akiko
Fundamental Research Laboratories Nec Corporation
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Gomyo Akiko
Fundamental And Environmental Research Laboratories Nec Corporation
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SUZUKI Tohru
Photonics and Wireless Devices Research Laboratories, NEC Corporation
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Takasaki Hideki
Research Institute For Advanced Science And Technology Osaka Prefecture University
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YOKOYAMA Takuji
Research Institute for Advanced Science and Technology, Osaka Prefecture University
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KONDO Atsushi
Research Institute for Advanced Science and Technology, Osaka Prefecture University
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Nakagawa Tomokatsu
Research Institute for Advanced Science and Technology, Osaka Prefecture University, 1-2 Gakuen-cho,
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Yokoyama Takuji
Research Institute For Advanced Science And Technology Osaka Prefecture University
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Kondo Atsushi
Research Institute For Advanced Science And Technology Osaka Prefecture University
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Ouchi Kazuhiro
Research Institute For Advanced Science And Technology Osaka Prefecture University
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Suzuki Tohru
Photonics And Wireless Devices Research Laboratories Nec Corporation
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Suzuki Tohru
Photonic and Wireless Devices Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Inoue Naohisa
Frontier Science Innovation Center Osaka Prefecture University, 1-2 Gakuen-cho, Sakai, Osaka 599-8570, Japan
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Kawamura Yuichi
Frontier Science Innovation Center Osaka Prefecture University, 1-2 Gakuen-cho, Sakai, Osaka 599-8570, Japan
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Kawamura Yuichi
Frontier Science Innovation Center, Osaka Prefecture University, Sakai 599-8570, Japan
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Inoue Naohisa
Frontier Science Innovation Center, Osaka Prefecture University, 1-2 Gakuen-cho, Sakai, Osaka 599-8570, Japan
著作論文
- Band-Gap Change in Ordered/Disordered GaAs_Sb_y Layers Grown on (001) and (111)B InP Substrates : Semiconductors
- Electroluminescence of In_Ga_As/GaAs_Sb_ Type-II Multiple Quantum Well Light-Emitting Diodes Grown on (111)B InP by Molecular Beam Epitaxy : Short Note
- Molecular Beam Epitaxial Growth and Characterization of GaAs_Sb_y Layers on (111)B InP Substrates
- MBE Growth and Characterization of InGaAsSbN Quantum Well Laser Diodes at 2μm Wavelength Region grown on InP Substrates
- InAsSbN Quantum Well Laser Diodes Operating at 2-μm-Wavelength Region Grown on InP Substrates
- 2.43 μm Light Emission of InGaAsSbN Quantum Well Diodes Grown on InP Substrates
- Emission Properties of InGaAsSbN Quantum Well Laser Diodes in 2 μm Wavelength Region Grown on InP Substrates
- Lasing Characteristics of InGaAsSbN Quantum Well Laser Diodes at 2-μm-Wavelength Region Grown on InP Substrates
- Electroluminescence of In0.53Ga0.47As0.99N0.01/GaAs0.5Sb0.5 Type-II Quantum Well Light-Emitting Diodes Grown on InP Substrates by Molecular Beam Epitaxy
- InAsSbN Quantum Well Laser Diodes Operating at 2-μm-Wavelength Region Grown on InP Substrates