Lasing Characteristics of InGaAsSbN Quantum Well Laser Diodes at 2-μm-Wavelength Region Grown on InP Substrates
スポンサーリンク
概要
- 論文の詳細を見る
InGaAsSbN quantum well laser diodes operating at a 2-μm-wavelength region were grown by molecular beam epitaxy (MBE) on InP substrates and their characteristics were studied. Two types of laser diode with different Sb compositions of 0.014 and 0.14 were compared, where the N composition was fixed at 0.014. It was found that an increase in Sb composition induces a marked redshift of the emission wavelength and a reduction in lasing threshold current density.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-08-15
著者
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KAWAMURA Yuichi
Frontier Science Innovation Center Osaka Prefecture University
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NAKAGAWA Tomokatsu
Frontier Science Innovation Center Osaka Prefecture University
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INOUE Naohisa
Frontier Science Innovation Center Osaka Prefecture University
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Inoue Naohisa
Frontier Science Innovation Center, Osaka Prefecture University, 1-2 Gakuen-cho, Sakai, Osaka 599-8570, Japan
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