Emission Properties of InGaAsSbN Quantum Well Laser Diodes in 2 μm Wavelength Region Grown on InP Substrates

概要

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InGaAsSbN quantum well laser diodes operating in the 2 μm wavelength region were grown by molecular beam epitaxy (MBE) on InP substrates and their emission properties were studied. Two types of laser diodes with different Sb composition were compared. It was found that an increase in the Sb composition induces a marked redshift of the peak wavelength and a reduction of the spectral line width of the electroluminescence (EL) spectrum. A blueshift of the EL peak energy and a reduction of the EL spectral line width as well as a marked enhancement of the EL intensity were obtained by postgrowth rapid thermal annealing. The Sb composition dependence of the lasing characteristics was also studied. A clear redshift of the lasing wavelength was observed by increasing Sb composition.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2006-04-30