Scanning Tunneling Microscopy Observation of Germapericycline on a Graphite Surface

スポンサーリンク

概要

• 論文の詳細を見る

• Room temperature scanning tunneling microscopy (STM) has been carried out on two newly synthesized organic molecules, octabutylgerma-4-pericycline C40H72Ge4 and dodecaphenylgerma-6-pericycline C84H60Ge6, at atmospheric pressure condition. A regular array of cluster-like patterns and square patterns are observed for C40H72Ge4 molecules. Straight lines structures of regular periodicity of about 5.5 nm are noticed for C84H60Ge6 molecule. Some molecular islands are also observed for both molecules by STM. Therefore the molecules tend to self-assemble on the graphite surface. Spectra obtained from X-ray Photoelectron Spectroscopy (XPS) and X-ray Fluorescence Spectroscopy (XFS) support the molecular assembly on the substrate surface even in an ultra high vacuum condition.

• 日本真空協会の論文
• 2005-05-20

著者

• DAIMON Hiroshi

  Nara Institute of Science and Technology (NAIST)

• Daimon Hiroshi

  Graduate School Of Material Science Nara Advanced Institute Of Science And Technology

• Matsui Fumihiko

  Graduate School Of Materials Science Nara Institute Of Science And Technology(naist)

• HATTORI Ken

  Graduate School of Materials Science, Nara Institute of Science and Technology

• Hattori Ken

  Graduate School Of Materials Science Nara Institute Of Science And Technology(naist)

• Daimon Hiroshi

  Graduate School Of Materials Science Nara Institute Of Science And Technology(naist)

• NAYEEM Jannatul

  Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST)

• TAKEDA Sakura

  Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST)

• Nayeem Jannatul

  Graduate School Of Materials Science Nara Institute Of Science And Technology (naist)

• Hattori Ken

  Graduate School Of Materials Science Nara Institute Of Science And Technology

• Takeda Sakura

  Graduate School Of Materials Science Nara Institute Of Science And Technology(naist)

• Nisino Takeda

  Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST)

関連論文

• New simple photoemission electron microscope with an energy filter (第48回真空に関する連合講演会プロシーディングス--2007年11月14日〜16日,東京)
• Temperature-Dependent Change of Correlated Electronic States in Yb_4As_3 and Yb_4(As_Sb_x)_3 Probed by High Resolution Photoemission Spectroscopy
• Development of Scanning Probe Microscope for Auger Analysis
• Development of Electron Source for Auger Electron Spectroscopy in Scanning Probe Microscope Systems
• Electronic Structure of Ni Intercalated TiS_2 Probed by Angle Resolved and 2p Core Resonance Photoemission as Well as by 2p Core Absorption Spectroscopy
• Photoemission and Absorption Spectroscopy of Mn_2Sb, MnAlGe, Mn_2As, Cr_2As and Fe_2As
• Resonance Photoemission Spectroscopy of Mn_2As, Cr_2As and Fe_2As
• Metastable Domain Structures of Ferromagnetic Microstructures Observed by Soft X-Ray Magnetic Circular Dichroism Microscopy
• Glancing Angle Dependence of the X-Ray Emission Measured under Total Reflection Angle X-Ray Spectroscopy (TRAXS) Condition during Reflection High Energy Electron Diffraction Observation
• New Models for the 7×7,5×5,2×8 Structures on Si(111) and Ge(111) Surfaces
• Symmetry Analysis of the Fermi Surface States of Sr_2RuO_4 by Display-Type Photoelectron Spectroscopy
• Characterization of Electronic States Using a Polarized Light and a Display Analyzer (Proceedings of the Second International Conference on SRMS(Synchrotron Radiation in Materials Science)(2))
• Photon-Stimulated Desorption Mechanism of Cl^+ Ions from Cl/Si(111) Surface
• Strong Circular Dichroism in Photoelectron Diffraction from Nonchiral, Nonmagnetic Material - Direct Observation of Rotational Motion of Electrons
• Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
• Photoluminescence of Unintentionally Doped and N-Doped 3C-SiC Grown by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
• Temperature Dependence of Electrical Properties of Nitrogen-Doped 3C-Sit
• High-Temperature Operation of Silicon Carbide MOSFET
• Annealing Effects on Al and AN-Si Contacts with 3C-SiC
• Development of the Hard-X-ray Angle Resolved X-ray Photoemission Spectrometer for Laboratory Use
• Stereo-microscopy of atomic arrangements on thin films using circular dichroism in x-ray photoelectron angular distribution (Invited Peview Paper)
• Orbital Angular Momentum of Iron Valence Band Electron Deduced by Photoelectron Stereography(Atomic and molecular physics)
• Site-Specific Orbital Angular Momentum Analysis of Graphite Valence Electron Using Photoelectron Forward Focusing Peaks(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
• Scanning Tunneling Microscopy Observation of Germapericycline on a Graphite Surface
• Development of High-Energy-Resolution Display-Type Photoelectron Spectrometer in the Ultraviolet Photoelectron Spectroscopy Region
• Self-Assembled Growth of Spinel (Fe,Zn)O-Perovskite BiFeO Nanocomposite Structures Using Pulsed Laser Deposition
• Photoelectron Diffraction and Holographic Reconstruction of Graphite
• Negative Photoelectron Diffraction Replica in Secondary Electron Angular Distribution
• Development of Scanning Probe Microscope for Auger Analysis
• Characterizing Edge and Stacking Structures of Exfoliated Graphene by Photoelectron Diffraction
• Characterizing Edge and Stacking Structures of Exfoliated Graphene by Photoelectron Diffraction (SELECTED TOPICS IN APPLIED PHYSICS : Nano Electronics and Devices : Characterization and Control of Nano Surfaces and Interfaces)
• Element Assignment for Three-Dimensional Atomic Imaging by Photoelectron Holography

もっと見る 閉じる

スポンサーリンク