Pulsed Laser Deposited Lead Zirconate Titanate Thin Films for Micro Actuators
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概要
- 論文の詳細を見る
Lead zirconate titanate (Pb(ZrxTi1-x)O3): PZT) films were deposited by pulsed laser ablation on Si/SiO2/Ti/Pt substrates with one seed layer of sol-gel derived PZT at a deposition rate of 0.7 μm/h and substrate temperature of about 500°C. The fabricated films showed the perovskite PZT phase without pyrochlore phase. The dielectric constant was approximately 1580 when measured at 1 kHz. The values of the saturation polarization, remanent polarization and coercive field of the 0.8-μm-thick film were about 46.6 μC/cm2, 24.6 μC/cm2 and 36.4 kV/cm, respectively. Furthermore, a lower tensile stress (approximately 33 MPa) was obtained by wafer curvature measurements before and after PZT deposition. The piezoelectric coefficient $d_{31}$ was measured using a bimorph-beam and a value of 13 pC/N was obtained.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-06-15
著者
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TSAUR Jiunnjye
National Institute of Advanced Industrial Science and Technology
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ZHANG Lulu
National Institute of Advanced Industrial Science and Technology
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ICHIKI Masaaki
National Institute of Advanced Industrial Science and Technology
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Maeda Ryutaro
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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WANG Zhan-Jie
Tohoku University
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Ichiki Masaaki
National Institute of Advanced Industrial Science and Technology, 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564, Japan
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Maeda Ryutaro
National Institute of Advanced Industrial Science and Technology, 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564, Japan
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Zhang Lulu
National Institute of Advanced Industrial Science and Technology, 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564, Japan
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Wang Zhan-Jie
Tohoku University, Aoba-yama 02, Sendai 980-8579, Japan
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