Electrical Properties and Microstructure of Lead Zirconate Titanate Thin Film In Situ Grown by Hybrid Processing:Sol-Gel Method and Pulsed Laser Deposition
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概要
- 論文の詳細を見る
Highly oriented Pb(ZrxTi1-x)O3 (PZT) thin films were in situ grown on Pt/Ti/SiO2/Si substrates by a hybrid process combining the sol-gel method and pulsed-laser deposition (PLD). Crystalline phases and preferred orientation of the PZT films were investigated by X-ray diffraction analysis. Surface morphology and microstructure were observed by scanning electron microscopy and transmission electron microscopy, respectively. Electrical properties of the films were evaluated by measuring their $P$-$E$ hysteresis loops and dielectric constants. The preferred orientation of the films deposited by hybrid processing can be controlled using the layer deposited by the sol-gel method. The deposition temperature required to obtain the perovskite phase in hybrid processing is 460°C, and is significantly lower than that in the case of direct film deposition by PLD on a Pt/Ti/SiO2/Si substrate. The dielectric constant and remanent polarization of the films in situ deposited at 460°C were approximately 900 and 15 μC/cm2, respectively.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-09-15
著者
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Wang Zhan
Department Of Histoembryology China Medical University:no. 2 Laboratory Of Electron Microscopy China
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ICHIKI Masaaki
National Institute of Advanced Industrial Science and Technology
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Kokawa Hiroyuki
Department Of Materials Processing Faculty Of Engineering Tohoku University
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Maeda Ryutaro
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Maeda Ryutaro
National Institute of Advanced Industrial Science and Technology, 1-2 Namiki, Tsukuba, Ibaraki 305-8564, Japan
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Kokawa Hiroyuki
Department of Materials Processing, Graduate School of Engineering, Tohoku University, Aoba-yama 02, Sendai 980-8579, Japan
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Wang Zhan
Department of Materials Processing, Graduate School of Engineering, Tohoku University, Aoba-yama 02, Sendai 980-8579, Japan
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