Electrical Properties and Microstructure of Low-Temperature-Crystallized Lead Zirconate Titanate Thin Films Prepared by 2.45 GHz Microwave Irradiation

概要

論文の詳細を見る
Lead zirconate titanate (PZT) thin films were coated on Pt/Ti/SiO2/Si substrates by a sol–gel method and then crystallized at 490 °C using the magnetic field of 2.45 GHz microwave irradiation. The crystalline phases and microstructures as well as the electrical properties of the PZT thin films were investigated. X-ray diffraction analysis indicated that the films were crystallized well into the perovskite phase. Scanning electron microscopy showed that the PZT films had a typical rosette structure, which consisted of large round grains on a matrix of fine grains. A transmission electron microscopy (TEM) study revealed that the fine grains were also mainly crystallized into the perovskite phase. The average remanent polarization and coercive field of the PZT films were approximately 21 μC/cm2 and 92 kV/cm, respectively, whereas the dielectric constant and loss value measured at 1 kHz were approximately 510 and 0.07, respectively.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2009-09-25