Electrical Properties and Microstructures of Sol-Gel-Deposited Lead Zirconate Titanate Thin Films Crystallized by 28 GHz Microwave Irradiation
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概要
- 論文の詳細を見る
Pb(ZrxTi1-x)O3 (PZT) thin films were coated on Pt/Ti/SiO2/Si substrates by a sol-gel method and then crystallized by 28 GHz microwave irradiation. The crystalline phases and microstructures as well as the electrical properties of the microwave-irradiated PZT films were investigated as a function of the elevated temperature generated by microwave irradiation. X-ray diffraction analysis indicated that the PZT films crystallized well into the perovskite phase at an elevated temperature of 480°C by microwave irradiation. Scanning electron microscopy images showed that the films had a granular grain structure and most of the grains were approximately 1.5 μm in size. With increasing elevated temperature from 480°C to 600°C by microwave irradiation, the breadth of grain boundaries of the films became narrow and the remanent polarization of the films increased slightly. It is clear that microwave irradiation is effective for obtaining well-crystallized PZT films with good properties at low temperatures in a short time.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-09-15
著者
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Wang Zhan
Department Of Histoembryology China Medical University:no. 2 Laboratory Of Electron Microscopy China
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ICHIKI Masaaki
National Institute of Advanced Industrial Science and Technology
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Kokawa Hiroyuki
Department Of Materials Processing Faculty Of Engineering Tohoku University
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Takizawa Hirotsugu
Department Of Applied Chemistry Graduate School Of Engineering Tohoku University
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Maeda Ryutaro
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Maeda Ryutaro
National Institute of Advanced Industrial Science and Technology, 1-2 Namiki, Tsukuba, Ibaraki 305-8564, Japan
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