Microelectromechanical Systems-Based Electrostatic Field Sensor Using Pb(Zr,Ti)O3 Thin Films
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概要
- 論文の詳細を見る
We have developed microelectromechanical system (MEMS)-based electrostatic field sensors using Pb(Zr,Ti)O3 thin films. Multilayers of Pt/Ti/PZT/Pt/Ti/SiO2 deposited on silicon-on-insulator (SOI) wafers have been fabricated into the sensors through MEMS microfabrication technology. The resonant frequency of the fabricated sensors is within 1700–1800 Hz. The developed MEMS-based electrostatic field sensors have shown a good linear response to the voltage of an electrified body, which is comparable to that of commercially available electrostatic field sensors.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-09-25
著者
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ITOH Toshihiro
National Institute of Advanced Industrial Science and Technology (AIST)
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Takahashi Masaharu
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Maeda Ryutaro
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Kobayashi Takeshi
National Institute For Materials Science
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Oyama Syoji
HST Co., Ltd., 2-6-23 Sinyokohama, Kouhoku-ku, Yokohama 222-0033, Japan
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Takahashi Masaharu
National Institute of Advanced Industrial Science and Technology (AIST), 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564, Japan
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Itoh Toshihiro
National Institute of Advanced Industrial Science and Technology (AIST), 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564, Japan
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