Study on Homogeneous Wafer Level Dielectric Film Preparation Using Chemical Solution Deposition Method
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概要
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Process parameters of lead zirconate titanate thin film preparation using metal organic decomposition method were optimized by a statistical method and their effects on the film properties were investigated quantitatively in this study. The crystallization temperature and the precursor formation temperature were found to be important factors for high quality thin films. We also investigated the films deposited on the 4-in. wafer under the optimum conditions and found that it exhibited great film properties. Furthermore, the process damage to the wafer sample by photolithography was clarified experimentally. The results will be useful for the fabrication of the MEMS devices and integration technology of electrical devices including piezoelectric films.
- 2013-06-25
著者
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ICHIKI Masaaki
National Institute of Advanced Industrial Science and Technology
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ITOH Toshihiro
National Institute of Advanced Industrial Science and Technology (AIST)
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Suga Tadatomo
Department Of Precision Engineering Faculty Of Engineering University Of Tokyo
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Sueshige Kazutaka
Department of Precision Engineering, School of Engineering, University of Tokyo
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Ichiki Masaaki
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8564, Japan
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