Measurement of Alignment Accuracy for Wafer Bonding by Moiré Method
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概要
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A centrosymmetric square grating was developed in this paper. Moiré fringes produced by the two centrosymmetric square gratings are highly sensitive with the misalignments and misaligned directions. The distance between the mismatched moiré fringes are expected to be measured directly by an infrared (IR) microscope without requiring any external reference. Using two pair of the moiré square gratings, misalignments of bonded wafers are proposed to be measured in the $X$–$Y$–$\theta$ axis simultaneously on wafer scale. The measurement accuracy of 0.5 μm in the $X$–$Y$ axis and $3\times 10^{-4}$ deg in the $\theta$-axis is presented as an example, which is sufficient for the alignment accuracy of currently available wafer bonding. Moreover, the measurement accuracy by this moiré method can be improved to nanometer level if the fabrication errors and IR microscope resolution are allowed.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
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Wang Chenxi
Department Of Precision Engineering School Of Engineering The University Of Tokyo
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Suga Tadatomo
Department Of Precision Engineering Faculty Of Engineering University Of Tokyo
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