Homogenizing and Applying Dielectric Film to Wafer-Level Film Preparation
スポンサーリンク
概要
- 論文の詳細を見る
MEMS devices such as piezoelectric devices are being used for various purposes in recent years. At the same time, silicon wafer diameters have been expanding for the purposes of mass production and cost reduction in the manufacture of these devices. Therefore, it is becoming more difficult to prepare a dielectric film with homogeneous thickness and electrical properties on the wafer. Generally, physical vapor deposition (PVD) methods such as sputtering are said to be comparatively reproducible for preparing films on large wafers, but these methods require expensive equipment. Metal organic decomposition (MOD), a chemical solution deposition (CSD) method, was used to form a PZT (Pb(Zr,Ti)O3) film on the 4-inch wafers in this study because it does not need expensive equipment such as a vacuum system. To improve the ferroelectric properties of the film formed using the MOD method, we optimized the process parameters using design of experiments methods and found that temperature is the most significant control factor. A PZT film was prepared homogeneously on 4-inch wafers under optimum conditions. Furthermore, a more homogeneous PZT film was prepared by making the temperature uniform using a soaking cover. We think that these results can be applied to the preparation of films on larger wafers as an alternative to PVD methods, which are currently the main method of preparing dielectric films but which require expensive equipment.
- The Japan Institute of Electronics Packagingの論文
著者
-
Ichiki Masaaki
Department Of Precision Engineering Graduate School Of Engineering The University Of Tokyo:jst-crest
-
Suga Tadatomo
Department Of Precision Engineering Faculty Of Engineering University Of Tokyo
-
Iimura Keita
Department of Precision Engineering, School of Engineering, University of Tokyo
-
Sueshige Kazutaka
Department of Precision Engineering, School of Engineering, University of Tokyo
-
Itoh Toshihiro
AIST
-
Ichiki Masaaki
Department of Precision Engineering, School of Engineering, University of Tokyo
関連論文
- P-MNS-07 NANOTRANSFER METHOD FOR THE FERROELECTRIC FILMS ONTO THE POLYMER SUBSTRATE(Micro/Nanosystem Science and Technology,Technical Program of Poster Session)
- Study on Sn-Ag Oxidation and Feasibility of Room Temperature Bonding of Sn-Ag-Cu Solder
- Low-Temperature Direct Bonding of Flip-Chip Mountable VCSELs with Au-Au Surface Activation
- Effect of Surface Contamination on Solid-State Bondability of Sn-Ag-Cu Bumps in Ambient Air
- Isothermal Fatigue Properties of Sn-Ag-Cu Alloy Evaluated by Micro Size Specimen
- Low-Temperature Process of Fine-Pitch Au–Sn Bump Bonding in Ambient Air
- Evaluation of Alignment Accuracy for Wafer Bonding Using Moire Technique
- Void Free Room Temperature Silicon Direct Bonding by Sequential Plasma Activated Process
- Low Temperature Interconnection of Cu Micro-bump on Polyimide and Ni/Au Film by Surface Activated Flip Chip Method
- Transmission Electron Microscopy of Bi(Pb)-Sr-Ca-Cu-O Superconductor Prepared by the Intermediate Pressing Process
- Low-Temperature Bumpless Bonding for Surface Acoustic Wave Components
- Measurement of Alignment Accuracy for Wafer Bonding by Moiré Method
- Void-Free Room-Temperature Silicon Wafer Direct Bonding Using Sequential Plasma Activation
- Study on Homogeneous Wafer Level Dielectric Film Preparation Using Chemical Solution Deposition Method
- Fabrication and Characterization of Ferroelectric PZT and BaTiO3 Thin Films on Releasable Electrode Structures
- Homogenizing and Applying Dielectric Film to Wafer-Level Film Preparation
- Study on Homogeneous Wafer Level Dielectric Film Preparation Using Chemical Solution Deposition Method