Void-Free Room-Temperature Silicon Wafer Direct Bonding Using Sequential Plasma Activation
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概要
- 論文の詳細を見る
Room-temperature Si/Si wafer direct bonding has been performed by an optimized sequential plasma activated bonding process. A shorter O2 reactive ion etching (RIE) plasma (${\sim}10$ s) treatment followed by treatment with N2 radicals for 60 s is used for surface activation. The activated wafers are brought into contact in ambient air. After storage at room temperature for 24 h, high bonding strength (${\sim}2.25$ J/m2) is achieved without requiring any annealing process. This value is close to the bulk-fracture strength of silicon. Furthermore, no annealing voids are observed at Si/Si interfaces even if the bonded wafer pairs are heated from 200 to 800 °C in subsequent processes. The bonding interfaces and their optical transmittances are also investigated. This void-free, room-temperature bonding technique based on sequential plasma activation is inexpensive and suitable for the microelectromechanical system manufacturing process and wafer-scale packaging.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-04-25
著者
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Higurashi Eiji
Research Center For Advanced Science And Technology The University Of Tokyo
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Wang Chenxi
Department Of Precision Engineering School Of Engineering The University Of Tokyo
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Suga Tadatomo
Department Of Precision Engineering Faculty Of Engineering University Of Tokyo
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Suga Tadatomo
Department of Precision Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Wang Chenxi
Department of Precision Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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