Room-Temperature Bonding of Vertical-Cavity Surface-Emitting Laser Chips on Si Substrates Using Au Microbumps in Ambient Air
スポンサーリンク
概要
- 論文の詳細を見る
The feasibility of room-temperature (RT) bonding of vertical-cavity surface-emitting laser (VCSEL) chips on silicon (Si) substrates with Au microbumps was demonstrated by Au--Au surface-activated bonding. The diameter at the top, the height, and the pitch of Au microbumps measured approximately 5, 2, and 10 μm, respectively. Following activation of the Au surfaces with argon radio-frequency plasma, Au--Au bonding was carried out using contact at RT in ambient air. The measured results of light--current--voltage ($L$--$I$--$V$) characteristics indicated no significant degradation of the VCSEL chips after bonding.
- The Japan Society of Applied Physicsの論文
- 2008-11-25
著者
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HIGURASHI Eiji
Research Center for Advanced Science and Technology, The University of Tokyo
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SUGA Tadatomo
School of Engineering, The University of Tokyo
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Higurashi Eiji
Research Center For Advanced Science And Technology The University Of Tokyo
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Higurashi Eiji
Res. Center For Advanced Sci. And Technol. The Univ. Of Tokyo
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Suga Tadatomo
School Of Engineering The Univ. Of Tokyo
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SAWADA Renshi
Kyushu University
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Takigawa Ryo
School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Sawada Renshi
Department of Intelligent Machinery and Systems, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 8
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Takigawa Ryo
School Of Engineering The University Of Tokyo
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