Abe Yasuhiro | Graduate School Of Engineering Tokyo City University
スポンサーリンク
概要
関連著者
-
Abe Yasuhiro
Graduate School Of Engineering Tokyo City University
-
Nohira Hiroshi
Graduate School of Engineering, Musashi Institute of Technology, Setagaya, Tokyo 158-8557, Japan
-
Miyata Noriyuki
Graduate School of Engineering, Musashi Institute of Technology, Setagaya, Tokyo 158-8557, Japan
-
MIYATA Noriyuki
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Tec
-
YASUDA Tetsuji
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Tec
-
Yasuda Tetsuji
National Institute Of Advanced Industrial Science And Technology (aist)
-
MIYATA Noriyuki
National Institute of Advanced Industrial Science and Technology (AIST)
-
Yasuda Tetsuji
National Institute Of Advanced Industrial Science And Technology
-
Miyata Noriyuki
National Institute Of Advanced Industrial Science And Technology
-
Ikenaga Eiji
JASRI/Spring-8, Kouto, Mikazuki, Hyogo 679-5198, Japan
-
Ikenaga Eiji
JASRI/SPring-8, Mikazuki, Hyogo 679-5198, Japan
-
Kitamura Koji
Graduate School of Engineering, Musashi Institute of Technology, Setagaya, Tokyo 158-8557, Japan
-
Hiroshi Nohira
Graduate School of Engineering, Tokyo City University, Setagaya, Tokyo 158-8557, Japan
-
Igarashi Satoru
Graduate School of Engineering, Musashi Institute of Technology, Setagaya, Tokyo 158-8557, Japan
-
Suzuki Haruhiko
Graduate School of Engineering, Musashi Institute of Technology, Setagaya, Tokyo 158-8557, Japan
-
Noriyuki Miyata
Graduate School of Engineering, Tokyo City University, Setagaya, Tokyo 158-8557, Japan
-
Tetsuji Yasuda
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (NeRI-AIST), Tsukuba, Ibaraki 305-8568, Japan
-
Yasuda Tetsuji
National Institute for Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
著作論文
- Kelvin Probe Study of Dipole Formation and Annihilation at the HfO_2/Si Interface
- Effect of Oxide Charge Trapping on X-ray Photoelectron Spectroscopy of HfO2/SiO2/Si Structures
- Reduction of Accumulation Capacitance in Direct-Contact HfO2/p-Type Si Metal–Oxide–Semiconductor Capacitors
- Conductance Spectroscopy Study on Interface Electronic States of HfO2/Si Structures: Comparison with Interface Dipole