Reduction of Accumulation Capacitance in Direct-Contact HfO2/p-Type Si Metal–Oxide–Semiconductor Capacitors

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概要

• 論文の詳細を見る

• We observed a significant reduction in accumulation capacitance of direct-contact HfO2/p-type Si structures compared to that of HfO2/n-type Si structures. The difference in capacitance corresponds to an estimated difference of approximately 0.26 nm in equivalent oxide thickness. We suggest that this capacitance reduction reflects a change in surface-hole distribution due to interface-dipole-induced potential.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2010-06-25

著者

• Abe Yasuhiro

  Graduate School Of Engineering Tokyo City University

• Nohira Hiroshi

  Graduate School of Engineering, Musashi Institute of Technology, Setagaya, Tokyo 158-8557, Japan

• Hiroshi Nohira

  Graduate School of Engineering, Tokyo City University, Setagaya, Tokyo 158-8557, Japan

• Miyata Noriyuki

  Graduate School of Engineering, Musashi Institute of Technology, Setagaya, Tokyo 158-8557, Japan

• Noriyuki Miyata

  Graduate School of Engineering, Tokyo City University, Setagaya, Tokyo 158-8557, Japan

• Tetsuji Yasuda

  Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (NeRI-AIST), Tsukuba, Ibaraki 305-8568, Japan

関連論文

• Kelvin Probe Study of Dipole Formation and Annihilation at the HfO_2/Si Interface
• Preparation of Yb-Ba-Cu-O Superconducting Films Using an Arc Discharge Evaporation Method
• Effect of Oxide Charge Trapping on X-ray Photoelectron Spectroscopy of HfO2/SiO2/Si Structures
• Reduction of Accumulation Capacitance in Direct-Contact HfO2/p-Type Si Metal–Oxide–Semiconductor Capacitors
• Conductance Spectroscopy Study on Interface Electronic States of HfO2/Si Structures: Comparison with Interface Dipole

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