Conductance Spectroscopy Study on Interface Electronic States of HfO2/Si Structures: Comparison with Interface Dipole

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概要

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• We examined the electronic-state characteristics of direct-contact HfO2/Si interfaces to study the origin of interface dipole. The interface state densities, time constants, and broadening parameters extracted by ac-conductance spectroscopy did not reveal any correlation with the flat-band voltage shifts caused by the interface dipole. We propose that the dipole is not associated with interface-state-related charge transfer, but possibly with chemical-bonding polarization.

• Japan Society of Applied Physicsの論文
• 2009-03-25

著者

• MIYATA Noriyuki

  Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Tec

• YASUDA Tetsuji

  Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Tec

• Abe Yasuhiro

  Graduate School Of Engineering Tokyo City University

関連論文

• Conductance Spectroscopy Study on Interface Electronic States of HfO_2/Si Structures : Comparison with Interface Dipole
• Kelvin Probe Study of Dipole Formation and Annihilation at the HfO_2/Si Interface
• Effect of Oxide Charge Trapping on X-ray Photoelectron Spectroscopy of HfO2/SiO2/Si Structures
• Reduction of Accumulation Capacitance in Direct-Contact HfO2/p-Type Si Metal–Oxide–Semiconductor Capacitors
• Photoassisted Scanning Tunneling Spectroscopy Study on the Local Spot Strucutres in Thin HfO2 Film on Si
• Conductance Spectroscopy Study on Interface Electronic States of HfO2/Si Structures: Comparison with Interface Dipole

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