Photoassisted Scanning Tunneling Spectroscopy Study on the Local Spot Strucutres in Thin HfO2 Film on Si

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概要

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• Local electrical property of thin HfO2 film on Si was investigated by using photoassisted scanning tunneling microscopy and spectroscopy which enable measurement of tunneling current from the Si conduction band to the probe. Significant enhancement in the current was observed at local spot structures which appear on the HfO2 surface during the observation. From the behavior of apparent barrier heights estimated by the current-distance measurement, the author proposes that positive charge exists at the spot.

• Japan Society of Applied Physicsの論文
• 2008-05-25

著者

• MIYATA Noriyuki

  Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Tec

関連論文

• Conductance Spectroscopy Study on Interface Electronic States of HfO_2/Si Structures : Comparison with Interface Dipole
• Photoassisted Scanning Tunneling Spectroscopy Study on the Local Spot Strucutres in Thin HfO2 Film on Si
• Conductance Spectroscopy Study on Interface Electronic States of HfO2/Si Structures: Comparison with Interface Dipole

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