Effect of Oxide Charge Trapping on X-ray Photoelectron Spectroscopy of HfO2/SiO2/Si Structures

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概要

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• We examined the effects of interfacial SiO2 layers and a surface metal layer on the photoelectron spectra of HfO2/SiO2/Si structures by hard X-ray photoemission spectroscopy with synchrotron radiation as well as conventional X-ray photoelectron spectroscopy (XPS). The Hf 4f and Hf 3d photoelectron peaks broadened and shifted toward a higher binding energy with increasing thickness of the interfacial SiO2 layer, even though photoelectrons may have been emitted from the HfO2 layer with the same chemical composition. Thinning the interfacial Si oxide layer to approximately one monolayer and depositing a metal layer on the HfO2 surface suppressed these phenomena. The O 1s photoelectron spectra revealed marked differences between the metal- and nonmetal-deposited HfO2/SiO2/Si structures; HfO2 and SiO2 components in the O 1s photoelectron spectra for the metal-deposited structures were observed at reasonably separated binding energies, but those for the nonmetal-deposited structures were not separated clearly. From this behavior concerning the effects of interfacial SiO2 and surface metal layers, we concluded that the Hf 4f, Hf 3d, and O 1s spectra measured from the HfO2/SiO2/Si structures did not reflect actual chemical bonding states. We consider that potential variations in the HfO2 film owing to charge trapping strongly affect the measured photoelectron spectra. On the basis of angle-resolved XPS measurements, we propose that positive charges are trapped at the HfO2 surface and negative charges are trapped inside the HfO2 layer.

• 2009-04-25

著者

• Abe Yasuhiro

  Graduate School Of Engineering Tokyo City University

• Ikenaga Eiji

  JASRI/Spring-8, Kouto, Mikazuki, Hyogo 679-5198, Japan

• Ikenaga Eiji

  JASRI/SPring-8, Mikazuki, Hyogo 679-5198, Japan

• Kitamura Koji

  Graduate School of Engineering, Musashi Institute of Technology, Setagaya, Tokyo 158-8557, Japan

• Nohira Hiroshi

  Graduate School of Engineering, Musashi Institute of Technology, Setagaya, Tokyo 158-8557, Japan

• Igarashi Satoru

  Graduate School of Engineering, Musashi Institute of Technology, Setagaya, Tokyo 158-8557, Japan

• Miyata Noriyuki

  Graduate School of Engineering, Musashi Institute of Technology, Setagaya, Tokyo 158-8557, Japan

• Suzuki Haruhiko

  Graduate School of Engineering, Musashi Institute of Technology, Setagaya, Tokyo 158-8557, Japan

関連論文

• Electric characteristics of Si_3N_4 films formed by directly radical nitridation on Si (110) and Si (100) surfaces
• Kelvin Probe Study of Dipole Formation and Annihilation at the HfO_2/Si Interface
• Preparation of Yb-Ba-Cu-O Superconducting Films Using an Arc Discharge Evaporation Method
• Effect of Oxide Charge Trapping on X-ray Photoelectron Spectroscopy of HfO2/SiO2/Si Structures
• Electric Characteristics of Si3N4 Films Formed by Directly Radical Nitridation on Si(110) and Si(100) Surfaces
• Reduction of Accumulation Capacitance in Direct-Contact HfO2/p-Type Si Metal–Oxide–Semiconductor Capacitors
• Conductance Spectroscopy Study on Interface Electronic States of HfO2/Si Structures: Comparison with Interface Dipole

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